Process for the production of semiconductor devices

A process for the production of a semiconductor device which comprises the steps of applying a solution of polycarbosilane of the general formula (1):

• ##STR2## in which R.sub.1 represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms or a substituted or unsubstituted aryl group;
• R.sub.2 represents a substituted or unsubstituted methylene or methyn group;
• and
• m and n each is a positive integer satisfying the condition of 10<m+n<1000 and a ratio of m and N is less than 0.3, in a solvent onto a substrate having electrically conductive components fabricated therein, and curing the coated layer of the polycarbosilane at a temperature of not less than 350.degree. C. in an oxidizing atmosphere to thereby convert the polycarbosilane layer to a silicon oxide layer.