Process for forming nitride protective coatings

A method of forming a specific reactive element barrier layer on a surface of a substrate material, said substrate material being essentially free of free sulfur and other contaminants capable of segregating to said substrate material surface, and further containing specific reactive elements selected from the group consisting of aluminum, titanium, zirconium, tantalum, columbium, silicon, beryllium, manganese, uranium, vanadium, magnesium, thorium, calcium, barium, rare earth elements, and combinations thereof, and elements whose nitrides are less stable than a corresponding nitride of the specified element, said method comprising the formation of a nitride barrier layer wherein said barrier layer is formed by:

• a) removing any specific reactive elements from the near-surface layer of the bulk substrate material up to a thickness of approximately 100 micrometers, by exposing said substrate material for about 30 minutes to a flowing hydrogen/hydrogen chloride atmosphere, at an elevated temperature between about 1000.degree. F. and 2000.degree. F., causing the diffusion of said specific reactive elements to said surface with the subsequent formation of gaseous chlorides and exhausting the gaseous chlorides into a flowing atmosphere and away from said material;
• b) adding specific reactive element atoms to said substrate material beneath said substrate surface;
• c) placing at least the surface and contiguous region of said substrate material in contact with a static or flowing process medium at a temperature from about 1000.degree. F. to about 2000.degree. F. and containing a specified process medium nitrogen concentration;
• d) monitoring and controlling the temperature and concentration of said process medium to maintain the same within the specified ranges;
• e) reducing said less stable atom nitrides at the substrate surface and reacting said specific reactive element atom at said substrate surface, said reaction occurring only with said provided by said process medium to form a specific reactive element nitride, such formation causing a specific reactive element atom concentration gradient between the surface and interior of said substrate material;
• and
• f) continuing to maintain said substrate material surface in contact with said process medium within said specific temperature range such that said specific reactive element concentration gradient causes said specific reactive atoms in the substrate material interior to diffuse to the surface of said substrate material, where they react with the nitrogen provided by said process medium until a uniform, lateral growth of specific reactive element barrier layer is formed, said barrier layer being strongly bonded to said substrate material surface,
• wherein said process medium is selected from the group consisting of:
• 1) a hydrogen/ammonia atmosphere having a nitrogen concentration from about 0.01 ppm to about 10 ppm;
• and
• 2) liquid lithium having a lithium nitride concentration from about 1 ppm to about 500 ppm.

A method of forming a specific reactive element barrier layer on a surface of a substrate material, said substrate material being essentially free of free sulfur and other contaminants capable of segregating to said substrate material surface, and further containing specific reactive elements selected from the group consisting of aluminum, titanium, zirconium, tantalum, columbium, silicon, beryllium, manganese, uranium, vanadium, magnesium, thorium, calcium, barium, rare earth elements, and combinations thereof, and elements whose nitrides are less stable than a corresponding nitride of the specified element, said method comprising the formation of a nitride barrier layer wherein said barrier layer is formed by:

• a) removing any specific reactive elements from the near-surface layer of the bulk substrate material up to a thickness of approximately 100 micrometers, by exposing said substrate material for about 30 minutes to a flowing hydrogen/hydrogen chloride atmosphere, at an elevated temperature between about 1000.degree. F. and 2000.degree. F., causing the diffusion of said specific reactive elements to said surface with the subsequent formation of gaseous chlorides and exhausting the gaseous chlorides into a flowing atmosphere and away from said material;
• b) placing at least the surface and contiguous region of said substrate material in contact with a static or flowing process medium at a temperature from about 1000.degree. F. to about 2000.degree. F. and containing a specified process medium nitrogen concentration;
• c) monitoring and controlling the temperature and concentration of said process medium to maintain the same within the specified ranges;
• d) reducing said less stable atom nitrides at the substrate surface and reacting said specific reactive element atom at said substrate surface, said reaction occurring only with said nitrogen provided by said process medium to form a specific reactive element nitride, such formation causing a specific reactive element atom concentration gradient between the surface and interior of said substrate material;
• and
• e) continuing to maintain said substrate material surface in contact with said process medium within said specific temperature range such that said specific reactive element concentration gradient causes said specific reactive atoms in the substrate material interior to diffuse to the surface of said substrate material, where they react with the nitrogen provided by said process medium until a uniform, lateral growth of specific reactive element barrier layer is formed, said barrier layer being strongly bonded to said substrate material surface,
• wherein said process medium is selected from the group consisting of:
• 1) a hydrogen/ammonia atmosphere having a nitrogen concentration from about 0.01 ppm to about 10 ppm;
• and
• 2) liquid lithium having a lithium nitride concentration from about 1 ppm to about 500 ppm.