Field-enhanced diffusion using optical activation
AssigneeNonophase Diamond Technologies, Inc.
InventorsGalina Popovici, Mark A. Prelas, T. Sung, S. Khasawinah
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Abstract
A method of making a semiconductor material using a modified forced diffusion method includes the steps of placing the semiconductor material on a substrate in a vacuum vessel, locating an impurity atop the semiconductor material, creating a high voltage potential across the semiconductor material, heating the semiconductor material and bombarding the semiconductor material with photons under the effects of the high voltage and heat previously created. The process is particularly applicable to creating N-type diamond semiconductor material.
Claims19
A method of making semiconductor material comprising the steps of:
- (a) placing a diamond substrate material on a substrate holder in an inert atmosphere or a vacuum vessel;
- (b) placing an impurity on the diamond substrate material;
- (c) creating a voltage potential across the diamond substrate material;
- (d) heating at least a portion of the diamond substrate material;
- and
- (e) bombarding the diamond substrate material with photons during the execution of steps (c) and (d).
A method of making semiconductor material comprising the steps of:
- (a) placing a diamond substrate material on a substrate holder in an inert atmosphere or a vacuum vessel;
- (b) placing an impurity on the diamond substrate material;
- (c) creating an electric field across the diamond substrate material;
- (d) heating at least a portion of the diamond substrate material;
- and
- (e) bombarding the diamond substrate material with photons during the execution of steps (c) and (d) whereby to cause atoms from the impurity to diffuse into the diamond substrate material.
Dependencies are inferred from the claim text.