Monolithic series and parallel connected photovoltaic module

A method of manufacturing a photovoltaic device on a monolithic substrate, comprising the steps of:

• (a) depositing a transparent conductive oxide film on a monolithic substrate to form a front contact layer;
• (b) forming connection strips and solder pads substantially on said front contact layer by pumping and depositing conductive fluid providing a paste comprising at least one conductive material selected from the group consisting of silver, copper, nickel, aluminum, gold, platinum and palladium, through a nozzle in a predefined pattern on said front contact layer, said nozzle being positioned by an X-Y-Z positioner comprising an automated positioning system controlled by a computer, said predefined pattern defined only by said computer and thermally curing said conductive material after said conductive material has been deposited on said front contact layer;
• (c) laser scribing substantially parallel first grooves in said front contact layer with a laser beam at a first power density to form front electrode segments on said monolithic substrate;
• (d) depositing and forming a layer of a semiconductor material on said front electrode segments and said connection strips, and filling said first grooves with said semiconductor material;
• (e) laser scribing second grooves in said layer of semiconductor material at positions substantially parallel to said first grooves with a laser beam at a second power density lower than said first power density to ablate said layer of semiconductor material in the absence of ablating said front electrode segments so as to form photovoltaic elements;
• (f) depositing and forming a back contact layer comprising conductive material selected from the group consisting of aluminum and tin oxide, on said layer of semiconductor material, and filling said second grooves with said conductive material to form a series connection to connect said front electrode segments and said back contact layer;
• and
• (g) laser scribing third grooves in said back contact layer and photovoltaic elements at positions substantially parallel to said second grooves with a laser beam at a third power density of about 10 to 20 times higher than said second power density to ablate said semiconductor material of said photovoltaic elements in the absence of ablating said front electrode segments to form gaps in said back contact layer so as to form a plurality of back electrodes for photovoltaic cells.