Fabricating an interconnect for testing unpackaged semiconductor dice having raised bond pads

A method for fabricating an interconnect suitable for establishing a temporary electrical connection with a semiconductor die having a raised contact location, said method comprising:

• providing a substrate;
• forming an elongated sharpened projection on the substrate, said sharpened projection dimensioned to penetrate into the raised contact location to a limited penetration depth;
• forming an insulating layer over the substrate and sharpened projection;
• forming a metal silicide conductive layer on the insulating layer and over the sharpened projection;
• and
• forming a conductive trace on the substrate in electrical communication with the conductive layer.

A method for fabricating an interconnect for a semiconductor die having a raised contact location, said method comprising:

• providing a substrate;
• forming a contact member on the substrate including a projection configured to penetrate into the raised contact location to a limited penetration depth;
• forming an insulating layer on the substrate and projection;
• forming a conductive layer comprising a metal silicide on the insulating layer;
• and
• forming a conductive trace on the substrate in electrical communication with the conductive layer.

A method for fabricating an interconnect for a semiconductor die having a raised contact location, said method comprising:

• providing a substrate;
• forming a contact member on the substrate including a projection configured to penetrate into the raised contact location to a limited penetration depth;
• forming an insulating layer over the substrate and projection;
• forming a conductive layer on the insulating layer and over the sharpened projection, said conductive layer comprising a first metal layer and a second metal layer;
• and
• forming a conductive trace on the substrate in electrical communication with the conductive layer.

A method for fabricating an interconnect for a semiconductor die having a raised contact location, said method comprising:

• providing a substrate;
• forming a contact member on the substrate including a projection configured to penetrate into the raised contact location to a limited penetration depth;
• forming an insulating layer over the substrate and projection;
• forming a conductive layer on the insulating layer and over the sharpened projection, said conductive layer comprising polysilicon;
• and
• forming a conductive trace on the substrate in electrical communication with the conductive layer.

A method for fabricating an interconnect for a semiconductor die having a raised contact location, said method comprising:

• providing a substrate;
• forming a contact member on the substrate including a projection comprising an elongated sharpened blade configured to penetrate into the raised contact location to a limited penetration depth;
• forming an insulating layer on the substrate and projection;
• and
• forming a conductive layer on the insulating layer.