Compound semiconductor devices and methods of making compound semiconductor devices

A semiconductor laser comprising:

• a semiconductor substrate of n-type;
• an n-clad layer of II-VI compound semiconductor on the substrate;
• an active layer of II-VI compound semiconductor on the n-clad layer;
• a p-clad layer of II-VI compound semiconductor on the active layer;
• a current blocking layer of n-type II-VI compound semiconductor on the p-clad layer and having an opening;
• a buried p-contact layer of p-ZnSeS on the current blocking layer and contacting the p-clad layer through the opening of the current blocking layer;
• a p-contact layer of p-ZnTe on the buried p-contact layer;
• a first electrode in contact with the p-contact layer;
• and
• a second electrode in contact with the semiconductor substrate;
• and
• a super lattice comprising ZeSe layers, ZnSeTe layers, and ZnTe layers between the buried p-contact layer and the p-contact layer wherein the super lattice comprises a first portion of p-ZnSe layers and p-ZnSeTe layers at a side of the buried p-contact layer, and a second portion of p-ZnSeTe layers and p-ZnTe layers at a side of the p-contact layer.

A semiconductor device comprising:

• an n-clad layer of one of II-VI compound semiconductors and N-containing III-V compound semiconductors;
• a p-clad layer of one of II-VI compound semiconductors and N-containing III-V compound semiconductors;
• an active layer of one of II-VI compound semiconductors and N-containing III-V compound semiconductors between the n-clad and p-clad layers;
• a current blocking layer of n-type semiconductor comprising one of II-VI compound semiconductors and N-containing III-V compound semiconductors, disposed on the p-clad layer and providing an opening;
• a p-contact layer of p-type semiconductor comprising one of II-VI compound semiconductors and N-containing III-V compound semiconductors on the current blocking layer and contacting the p-clad layer through the opening;
• and
• a p-side electrode on the p-contact layer.

A semiconductor device comprising:

• a semiconductor substrate of a first conductive type;
• a first clad layer of the first conductive type on the semiconductor substrate;
• an active layer of one of II-VI compound semiconductors and N-containing III-V compound semiconductors on the first clad layer;
• a second clad layer of a second conductive type on the active layer;
• a current blocking layer of the first conductive type on the active layer;
• a current blocking layer on the first conductive type on the second clad layer and having an opening;
• a contact layer of a semiconductor material of the second conductive type on the current blocking layer and contacting the second clad layer through the opening of the current blocking layer;
• a first electrode in contact with the contact layer;
• and
• a second electrode in contact with the semiconductor substrate.