Semiconductor devices and methods
AssigneeThe Board of Trustees of the University of Illinois
InventorsNick Holonyak, Jr., Steven A. Maranowski, Fred A. Kish
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Abstract
A semiconductor laser device includes, in a disclosed embodiment: a semiconductor active region disposed between upper and lower confining regions of opposite type semiconductor material; reflective facets at opposing edges of the active and confining regions; at least one of the confining regions including a layer of relatively high aluminum fraction aluminum-bearing III-V material between layers of relatively low aluminum fraction aluminum bearing III-V material, the layer of relatively high aluminum fraction material having, at its edges and adjacent the facets, spikes of native oxide of aluminum; and electrodes for applying electric potential across the upper and lower confining regions.
Claims9
A semiconductor laser device, comprising:
- a semiconductor active region disposed between upper and lower confining regions of opposite type semiconductor material;
- reflective facets at opposing edges of said active and confining regions;
- at least one of said confining regions including a layer of relatively high aluminum fraction aluminum-bearing III-V material between layers of relatively low aluminum fraction aluminum bearing III-V material, said layer of relatively high aluminum fraction material having, at its edges and adjacent said facets, spikes of native oxide of aluminum;
- and
- means for applying electric potential across said upper and lower confining regions.
A semiconductor light emitting device, comprising:
- a semiconductor active region disposed between upper and lower confining regions of opposite type semiconductor material;
- at least one of said confining regions including a layer of relatively high aluminum fraction aluminum-bearing III-V material between layers of relatively low aluminum fraction aluminum bearing III-V material, said layer of relatively high aluminum fraction material having, at its edges and adjacent said facets, spikes of native oxide of aluminum;
- and
- means for applying electric potential across said upper and lower confining regions.
Dependencies are inferred from the claim text.