Nanoelectric devices

A process of preparing single-electron devices comprising an array of elements each comprising at least two conductors contacting and separated by an ultrathin insulating or semiconducting layer, at least one of the conductors of each element being a nanowire, said process comprising:

• providing a metal substrate in sheet or foil form, the metal thereof being selected from aluminum, titanium, niobium, tantalum and alloys containing a predominant amount of one of said metals;
• anodizing said substrate electrolytically in an acid bath, to deposit thereon an oxide film having micropores of substantially mutually parallel axial disposition and substantially uniform diameter in the range from about 1 to about 500 nanometers and substantially uniform depth which is less than the thickness of the oxide film, so as to leave an ultrathin oxide layer between the bottom of each pore and the metal substrate;
• depositing in said pores a conductive material, to form a nanowire in contact with the oxide layer at the bottom of said pore;
• and depositing macro metal over the ends of the nanowires so formed, for external electrical contact purposes.