Method of making a semiconductor device having a gate all around type of thin film transistor
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorShigeto Maegawa
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Abstract
A method of manufacturing a semiconductor device including forming an insulating film on a substrate; forming an opening in the insulating film by anisotropic etching; embedding a dummy member in the opening; forming a channel member over the insulating film and the dummy member; removing the dummy member to form a gap in the opening between the channel member and the substrate; and forming a thin film on the channel member and in the gap covering the channel member, the thin film being a control electrode of a transistor for forming channels on opposite sides of the channel member.
Claims13
A method of manufacturing a semiconductor device comprising:
- forming an insulating film on a substrate;
- forming an opening in the insulating film by anisotropic etching;
- embedding a dummy member in the opening;
- forming a channel member over the insulating film and the dummy member;
- removing the dummy member to form a gap in the opening between the channel member and the substrate;
- and
- forming a thin film on the channel member and in the gap covering the channel member, the thin film being a control electrode of a transistor for forming channels on opposite sides of the channel member.
A method of manufacturing a semiconductor device comprising:
- forming an insulating film on a substrate;
- forming a dummy pattern over the insulating film;
- forming a channel member over the insulating film and the dummy pattern;
- removing the dummy member to form a gap between the channel member and the insulating film;
- and
- forming a thin film on the channel member and in the gap covering the channel member, the thin film being a control electrode of a transistor for forming channels on opposite sides of the channel member.
A method of manufacturing a semiconductor device comprising:
- forming a first control electrode on an insulating film disposed on a substrate;
- forming a dummy pattern over the first control electrode;
- forming a second control electrode over the first control electrode and the dummy pattern;
- removing the dummy pattern to form a gap between the first and second control electrodes;
- and
- forming a channel member on the second control electrode and in the gap covering the second control electrode.
Dependencies are inferred from the claim text.