Semiconductor laser diode apparatus and method of producing the same

A method of producing a semiconductor laser diode comprising steps of:

• forming a first clad layer of a first conduction type on a substrate of the first conduction type by a vapor phase epitaxy method;
• forming a current block layer on the first clad layer by the vapor phase epitaxy method;
• forming a V groove stripe in a vertical direction so that a tip of the V groove can arrive at the first clad layer in depth by wet-etching;
• forming an active layer on the first clad layer and the current block layer along the V groove stripe by the vapor phase epitaxy method;
• forming a second clad layer of a second conduction type on the active layer by the vapor phase epitaxy method;
• forming a contact layer of the second conduction type on the second clad layer by the vapor phase epitaxy method;
• forming a first electrode on a surface of the substrate which is reverse side of a surface on which the first clad layer is formed by a vacuum evaporation method;
• forming a second electrode on a surface of the contact layer by the vacuum evaporation method.