Superlattice cladding layers for mid-infrared lasers
AssigneeHughes Aircraft Company
InventorsThomas C. Hasenberg, David H. Chow
Life of this patent
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Abstract
A mid-IR laser is provided having novel AlAs/Al.sub.x Ga.sub.1-x Sb or InAs/Al.sub.x Ga.sub.1-x Sb superlattice cladding regions. The arsenide layers of the n-type cladding region are doped n-type, utilizing silicon, and may be used with conventional active region materials, such as InAs.sub.z Sb.sub.1-z and In.sub.w Ga.sub.1-w As.sub.y Sb.sub.1-y. The novel cladding regions can be deposited without the use of Group VI elements, such as Te, which are not preferred source materials for MBE growth. Furthermore, the need for quaternary layers, such as Al.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y, used in the prior art devices, is eliminated; consequently, the need for precise control of two Group V fluxes (As and Sb) is eliminated.
Claims18
A laser diode for use at mid-infrared frequencies, said laser diode including an active layer having a top surface and a bottom surface and a first p-type cladding region contacting said bottom surface and a second n-type cladding region contacting said top surface, wherein said first cladding region comprises a plurality of alternating layers of either AlAs or InAs and p-Al.sub.x Ga.sub.1-x Sb and wherein said second cladding region comprises a plurality of alternating layers of either n-AlAs or n-lnAs and Al.sub.x Ga.sub.1-x Sb wherein said Al.sub.x Ga.sub.1-x Sb layers in said second n-type cladding regions are intentionally undoped.
A laser diode for use at mid-infrared frequencies, said laser diode including an active layer having a top surface and a bottom surface and a first p-type cladding region contacting said bottom surface and a second n-type cladding region contacting said top surface, wherein said first cladding region comprises a plurality of alternating layers of either AlAs or InAs and p-Al.sub.x Ga.sub.1-x Sb and wherein said second cladding region comprises a plurality of alternating layers of either n-AlAs or n-lnAs and Al.sub.x Ga.sub.1-x Sb, wherein said n-AlAs layers in said second n-type cladding region are n-doped with silicon.
A laser diode for use at mid-infrared frequencies, said laser diode including an active layer having a top surface and a bottom surface and a first p-type cladding region contacting said bottom surface and a second n-type cladding region contacting said top surface, wherein said first cladding region comprises a plurality of alternating layers of either AlAs or InAs and p-Al.sub.x Ga.sub.1-x Sb and wherein said second cladding region comprises a plurality of alternating layers of either n-AlAs or n-lnAs and Al.sub.x Ga.sub.1-x Sb, wherein said alternating layers comprise AlAs and Al.sub.x Ga.sub.1-x Sb and wherein x is within the range of 0.4 to 1.
A laser diode for use at mid-infrared frequencies, said laser diode including an active layer having a top surface and a bottom surface and a first p-type cladding region contacting said bottom surface and a second n-type cladding region contacting said top surface, wherein said first cladding region comprises a plurality of alternating layers of either AlAs or InAs and p-Al.sub.x Ga.sub.1-x Sb and wherein said second cladding region comprises a plurality of alternating layers of either n-AlAs or n-lnAs and Al.sub.x Ga.sub.1-x Sb, wherein said Al.sub.x Ga.sub.1-x Sb layers in said second n-type cladding region are intentionally undoped.
A laser diode for use at mid-infrared frequencies, said laser diode including an active layer having a top surface and a bottom surface and a first p-type cladding region contacting said bottom surface and a second n-type cladding region contacting said top surface, wherein said first cladding region comprises a plurality of alternating layers of either AlAs or InAs and p- Al.sub.x Ga.sub.1-x Sb and wherein said second cladding region comprises a plurality of alternating layers of either n-AlAs or n-lnAs and Al.sub.x Ga.sub.1-x Sb, wherein said first and second cladding regions each comprise alternating layers of AlAs and Al.sub.x Ga.sub.1-x Sb and wherein each AlAs layer has a thickness within the range of about 3 to 9 .ANG. and wherein each Al.sub.x Ga.sub.1-x Sb layer has a thickness within the range of about 20 to 60 .ANG..
A method of making a laser diode for use at mid-infrared frequencies, said laser diode including an active layer having a top surface and a bottom surface and a first p-type cladding region contacting said bottom surface and a second n-type cladding region contacting said top surface, said method comprising
- (a) providing said first cladding region with a plurality of alternating layers of either AlAs or InAs and p-AlGaSb;
- and
- (b) providing said second cladding region with a plurality of alternating layers of either n-AlAs or n-InAs and AlGaSb wherein said AlGaSb layers in said n-type cladding region are intentionally undoped.
Dependencies are inferred from the claim text.