Copper-based metal polishing solution and method for manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsHideaki Hirabayashi, Masatoshi Higuchi
Life of this patent
Estimating the term…
Abstract
Disclosed is a copper-based metal polishing solution which hardly dissolves a Cu film or a Cu alloy film when the film is dipped into the solution, and has a dissolution velocity during polishing several times higher than that during dipping. This copper-based metal polishing solution contains at least one organic acid selected from aminoacetic acid and amidosulfuric acid, an oxidizer, and water.
Claims66
A copper-based metal polishing solution containing at least one organic acid selected from the group consisting of aminoacetic acid and amidosulfuric acid, an oxidizer, and water.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming at least one member selected from the group consisting of a trench and an opening corresponding to a shape of an interconnecting layer in an insulating film on a semiconductor substrate;
- depositing an interconnection material film consisting of copper or a copper alloy on said insulating film including said at least one member selected from the group consisting of a trench and an opening;
- and
- polishing said interconnection material film until a surface of said insulating film is exposed by using a polishing solution containing at least one organic acid selected from the group consisting of aminoacetic acid and amidosulfuric acid, an oxidizer, and water, thereby forming a buried interconnecting layer in said insulating film such that surfaces of said interconnecting layer and said insulting film are level with each other.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming at least one member selected from the group consisting of a trench and an opening corresponding to a shape of an interconnecting layer in an insulating film on a semiconductor substrate;
- depositing an interconnection material film consisting of copper or a copper alloy on said insulating film including said at least one member selected from the group consisting of a trench and an opening;
- polishing said interconnection material film until a surface of said insulating film is exposed by using a polishing solution containing at least one organic acid selected from the group consisting of aminoacetic acid and amidosulfuric acid, an oxidizer, and water, thereby forming a buried interconnecting layer in said insulating film such that surfaces of said interconnecting layer and said insulting film are level with each other;
- and
- treating the surface of said insulating film including said interconnecting layer with an aqueous dissolved ozone solution and then with an aqueous dilute hydrofluoric acid solution.
Dependencies are inferred from the claim text.