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US 5,574,312 AGranted
Low-inductance power semiconductor module
AssigneeABB Management AG
InventorsReinhold Bayerer, Thomas Stockmeier
Life of this patent
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Abstract
In the case of a power semiconductor module (1) according to the invention, substrates (8) having a power semiconductor assembly (2) are fitted on both sides of a heat sink (3). The power semiconductor assemblies (2) are made contact with by a stack of contact laminates (4), which contact laminates (4) run parallel to the heat sink (3). A very low-inductance structure is obtained thereby.
Claims19
A power semiconductor module comprising:
- a heat sink having opposed first and second sides;
- at least one power semiconductor assembly mounted on each of said first and second sides of said heat sink;
- and
- a plurality of electrically conductive contact laminates extending parallel to the heat sink stacked on top of the power semiconductor assemblies;
- and
- wherein each of the power semiconductor assemblies comprises at least one power semiconductor switch, in particular an IGBT, having a reverse-connected parallel diode connected across said switch, which are fitted to a substrate made of an electrically insulating and thermally conductive material selected from the group consisting of aluminum oxide, aluminum nitride and beryllium oxide.
3 more elements
Dependencies are inferred from the claim text.