Oriented ferroelectric thin-film element and manufacturing method therefor
AssigneeFuji Xerox Co., Ltd.
InventorsKeiichi Nashimoto, Atsushi Masuda
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Abstract
A buffer layer having crystal orientation in a (111) face is formed on a semiconductor single-crystal (100) substrate and a ferroelectric thin film having crystal orientation in a (111) or (0001) face is then formed over the buffer layer. The buffer layer is preferably formed of MgO at a temperature ranging from 20 to 600.degree. C. and at a rate ranging from 0.5 to 50 .ANG./sec. The thus formed ferroelectric thin film has its axes of polarization aligned in one direction. Using the oriented ferroelectric thin-film device, highly functional nonvolatile memories, capacitors or optical modulators can be fabricated on semiconductor substrates.
Claims9
An oriented ferroelectric thin film element comprising:
- a semiconductor single crystal (100) substrate;
- a buffer layer having a crystal orientation of (111) and random in-plane directions, said buffer layer being provided on said semiconductor single-crystal substrate;
- and
- a ferroelectric thin film having a crystal orientation of one of (111) and (0001), said ferroelectric thin film being provided on said buffer layer.
An oriented ferroelectric thin-film element according to claim , wherein said buffer layer is formed at a temperature ranging from 20.degree. to 600.degree. C. and at a rate ranging from 0.5 to 50 .ANG./sec.
Dependencies are inferred from the claim text.