Method and arrangement for determining the layer-thickness and the substrate temperature during coating

A method for determining a thickness of a layer and a temperature of a substrate during deposition or coating of the substrate in arrangements for the manufacture of semi-conductors or in deposition-devices by use of a detected temperature radiation from the substrate when being coated, characterized in that:

• (a) the emissivity (.epsilon.) of the substrate being coated is determined according to equation:
• .epsilon.=1-R
• in which:
• .epsilon. represents the determined emissivity Of the substrate being coated, and R represents the reflectivity determined by measuring the reflected radiation of the substrate being coated by reflectometry;
• (b) the temperature (T) of the substrate is determined according to equation:
• ##EQU8## in which:
• T represents the determined temperature of the substrate being coated,
• T.sub.0 represents the initial temperature of the substrate measured by pyrometry at the beginning of the deposition or coating,
• P.sub.0 represents the initial thermal radiation of the substrate measured by pyrometry at the beginning of the deposition or coating,
• P represents the thermal radiation of the substrate being coated measured by pyrometry,
• R.sub.0 represents the initial reflectivity of the substrate before being coated measured by reflectometry,
• L.sub.0 represents the initial intensity of the reflected radiation of the substrate measured by reflectometry at the beginning of the deposition or coating,
• L represents the intensity of the reflected radiation of the substrate being coated measured by reflectometry,
• c.sub.1 and c.sub.2 each independently represent constants,
• .lambda. represents the wavelength of incident radiation comprising mono-chromatic light on the substrate being coated from a light source, and
• f.sub.Planck (.lambda., T.sub.0) represents Planck's radiation formula as a function of wavelength and initial measured temperature of the substrate;
• and,
• (c) the thickness (d) of the layer deposited or coated on the substrate is determined by comparing a measured reflectivity, determined by measuring the reflected radiation of the substrate by reflectometry, with a given reflectivity vs. layer-thickness dependence (R=f(d)).