Capacitor for an integrated circuit and method of formation thereof, and a method of adding on-chip capacitors to an integrated circuit

A capacitor structure for an integrated circuit, the integrated circuit comprising active devices formed on a semiconductor substrate, overlying layers comprising interconnect metallization, a top dielectric layer having bond pad openings formed through the dielectric layer for contacting the underlying interconnect metallization, and a passivation layer formed over the integrated circuit,

• the capacitor structure being formed on a surface of the passivation layer, comprising:
• a plurality of vias defined through the passivation layer and the top dielectric layer for contacting the interconnect metallization of the underlying integrated circuit, the vias being filled with conductive material coplanar with the surface of the passivation layer,
• a first conductive layer formed on the passivation layer and defining a first conductive electrode forming a contact with the underlying interconnect metallization through one of the filled vias,
• a layer of capacitor dielectric formed on the first conductive electrode,
• a second layer of conductive material formed on the capacitor dielectric and defining a top electrode of the capacitor overlying the first electrode and extending laterally of the first electrode and forming a contact with the underlying interconnect metallization through another of said filled vias.

A capacitor structure for an integrated circuit, the integrated circuit comprising active devices formed on a semiconductor substrate, overlying layers comprising interconnect metallization, a top dielectric layer having bond pad openings formed through the dielectric for contacting the underlying interconnect metallization, and a surface passivation layer formed over the integrated circuit,

• the capacitor structure formed on a surface of the passivation layer, comprising:
• a plurality of vias defined through the passivation layer and the top dielectric layer for contacting the underlying metallization of the integrated circuit;
• a first conductive layer extending over the surface of the passivation layer and defining a first capacitor electrode and a first contact electrode, the first capacitor electrode extending over a via of the plurality of vias and forming a contact with the underlying interconnect metallization of the integrated circuit, and the contact electrode extending over another via of the plurality of vias and forming a contact with the underlying interconnect metallization of the integrated circuit;
• a layer of capacitor dielectric formed on the first capacitor electrode;
• a second conductive layer formed on the capacitor dielectric and overlying the first electrode and defining a top capacitor electrode, part of the second conductive layer extending laterally of the first electrode over the surface of the passivation layer and contacting underlying interconnect metallization of the integrated circuit through the contact electrode formed by the first conductive layer.