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US 5,561,088 AGranted
Heating method and manufacturing method for semiconductor device
AssigneeSony Corporation
InventorToshiyuki Sameshima
Life of this patent
Estimating the term…
Abstract
In a heating method for semiconductor devices, gas is filled in a heat chamber in which a heat target (semiconductor device) is mounted, and then the gas is compressed to produce heat. The heat target is heated to a desired temperature by the produced heat. Before the gas compression is performed, the heat target is preferably pre-heated by a heater.
Claims13
A method for heating a substrate comprising:
- placing a substrate to be heated in a closed heating chamber filled with a gas, said substrate and gas having a first temperature and said heating chamber having a first volume;
- and
- compressing the gas in said heating chamber by reducing the volume of said heating chamber to a second smaller volume, thereby heating said substrate and gas to a second higher temperature which is greater than the fist temperature by 400.degree. C. or more.
A method for heating a substrate comprising the steps of:
- filling gas in a heat chamber having a sidewall and having a piston capable of reducing or increasing volume of said heat chamber;
- mounting a substrate having a first temperature to said sidewall outwardly adjacent to said heat chamber;
- and
- reducing the volume of said heat chamber by actuating the piston to produce heat, thereby heating said substrate to a second higher temperature which is greater than said first temperature by 400.degree. C. or more.
1 more element
Dependencies are inferred from the claim text.