Method of forming a semiconductor device by activating regions with a laser light
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsAkira Takenouchi, Atsunori Suzuki, Hideto Ohnuma, Hongyong Zhang, Shunpei Yamazaki
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Abstract
An improved method of forming a semiconductor device on a glass substrate is described. The method comprises forming a semiconductor film on a glass substrate, heating the semiconductor film by means of a heater to a predetermined temperature, exposing the semiconductor film to pulsed laser light after the semiconductor film has been heated to the predetermined temperature by the heating step. The thermal shock due to sharp temperature change is lessened by the pre-heating step. The width of the pulsed laser light is greater than the height when a cross section is taken perpendicular to a length.
Claims41
A method of forming a semiconductor device comprising the steps of:
- forming a silicon film containing an impurity over a glass substrate;
- heating said silicon film:
- and
- exposing said heated silicon film to a pulsed laser light to activate atoms of the impurity,
- wherein a cross section of said pulsed laser light taken perpendicular to a length of said laser light has a width and a height, with said width greater than said height.
A method of forming a semiconductor device comprising the steps of:
- forming a gate insulating film on a crystalline silicon film shaped in the form of an island over a substrate;
- forming a gate electrode on said gate insulating film;
- introducing phosphorus or boron into said crystalline silicon film with said gate electrode as a mask;
- heating said substrate;
- and
- irradiating said crystalline silicon film with a pulsed laser light,
- wherein a cross section of said pulsed laser light taken perpendicular to a length of said laser light has a width and a height, with said width greater than said height.
A method of forming a semiconductor device comprising:
- forming a silicon film containing an impurity on a glass substrate;
- heating said silicon film;
- and
- scanning said heated silicon film with a laser beam to activate atoms of the impurity,
- wherein a cross section of said laser beam taken perpendicular to a length of said laser beam has a width and a height, with said width greater than said height.
A method of forming a semiconductor comprising:
- forming a silicon film containing an impurity over a glass substrate;and
- scanning said silicon film with a laser beam in a vacuum to activate atoms of the impurity,
- wherein a cross section of said laser beam taken perpendicular to a length of said laser beam has a width and a height, with said width greater than said height.
A method of forming a semiconductor device comprising the steps of:
- heating a silicon film containing an impurity;
- and
- exposing the heated silicon film to a pulsed laser light having an energy density of 200 to 400 mJ/cm.sup.2, to activate atoms of the impurity;
- wherein a cross section of said laser light taken perpendicular to a length of said laser light has a width and a height, with said width greater than said height.
A method of forming a semiconductor device comprising the steps of:
- forming a silicon film on a substrate;
- forming a gate insulating film on the silicon film;
- forming a gate electrode on the gate insulating film;
- introducing an impurity into the silicon film using the gate electrode as a mask;
- heating the silicon film;
- and
- irradiating the heated silicon film with a pulsed laser light having an energy density of 200 to 400 mJ/cm.sup.2, wherein a cross section of said laser light taken perpendicular to a length of said laser light has a width and a height, with said width greater than said height.
A method of forming a semiconductor device comprising the steps of:
- forming an intrinsic semiconductor layer comprising silicon over a substrate;
- heating said semiconductor layer;
- and
- crystallizing said semiconductor layer by irradiating a laser beam to said heated semiconductor layer,
- wherein a cross section of said laser beam taken perpendicular to a length of said laser beam has a width and a height, with said width greater than said height.
A method of forming a semiconductor device comprising the steps of:
- forming a semiconductor layer over a substrate;
- heating said semiconductor layer;
- emitting a pulsed laser beam wherein a cross section of said laser beam taken perpendicular to a length of said laser beam has a width and a height, with said width greater than said height;
- and
- scanning said heated semiconductor layer with said pulsed laser beam in a direction orthogonal to said width of said laser beam.
A method of forming a semiconductor device comprising the steps of:
- forming a semiconductor layer over a substrate;
- emitting a pulsed laser beam wherein a cross section of said laser beam taken perpendicular to a length of said laser beam has a width and a height, with said width greater than said height;
- and
- scanning said semiconductor layer with said pulsed laser beam,
- wherein said substrate is scanned with said laser beam by moving said substrate in a direction orthogonal to said width of said laser beam.
Dependencies are inferred from the claim text.