Electron emitting device having a polycrystalline silicon resistor coated with a silicide and an oxide of a work function reducing material
AssigneeCanon Kabushiki Kaisha
InventorsTakeo Tsukamoto, Akira Shimizu, Akira Suzuki, Masao Sugata, Isamu Shimoda, Masahiko Okunuki
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Abstract
An electron emitting device causes electron emission by a current supply in a coarse resistor film. The coarse thin resistor film is composed at least of a coarse thin silicon film.
Claims2
An electron emitting device for causing electron emission by a current supply in a coarse thin resistor film, wherein said coarse thin resistor film is composed of at least a coarse thin silicon film provided thereon with, in succession, a first layer formed of a silicide of a work function reducing material and a second layer formed of an oxide of said work function reducing material, said work function reducing material being capable of reducing a work function of the coarse thin resistor film.
Dependencies are inferred from the claim text.