US 5,556,501 A · Silicon scavenger in an inductively coupled RF plasma reactor

Silicon scavenger in an inductively coupled RF plasma reactor

AssigneeApplied Materials, Inc.

InventorsKenneth S. Collins, Craig A. Roderick, John R. Trow, Chan-Lon Yang, Jerry Y. Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Jay D. Pinson, II, Tetsuya Ishikawa, Lawrence C. Lei, Masato M. Toshima, Gerald Z. Yin

Life of this patent

Estimating the term…

Abstract

A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Claims15

Dependent claims

An RF plasma processing apparatus for processing of workpieces comprising:

a) a vacuum chamber in which a plasma is generated;
b ) a workpiece support member adapted for supporting workpieces to be processed within the chamber;
c) a gas inlet mounted in the chamber for supplying a plasma precursor processing gas to the chamber;
d) RF power source means for supplying first and second RF power signals;
e) a coil antenna coupling RF energy from the first RF power signal into the chamber so as to form a high density plasma from said processing gas;
f) a cathode electrode below or part of the workpiece support member electrically coupled to the second RF power signal so as to create an electric field which assists in attracting charged particles from the plasma toward the cathode electrode;
and
g) a second electrode disposed above said cathode electrode and comprising silicon for chemically interacting with components of said processing gas;
wherein said second electrode is controllably heated to increase its reactivity.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application

08/041,796Filed 1 Apr 1993 · continuation

Priority

3 Oct 1989

Granted

17 Sep 1996

Term ends

Not estimatedThe source records don’t support an estimate.

Classification24 codes

H01J 37/32871
Hygiene: means for trapping or directing unwanted particles
C23C 16/509
Using radio frequency discharges: using internal electrodes
H01J 37/32082
Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources: radio frequency generated…
H01J 37/32091
Radio frequency generated discharge: the radio frequency energy being capacitively coupled to the plasma

Family

Serial416,750Parent of this continuation-in-part · filed 3 Oct 1989

Serial559,947Parent of this continuation-in-part · filed 31 Jul 1990

Serial624,740Parent of this continuation-in-part · filed 3 Dec 1990

Serial626,050Parent of this continuation-in-part · filed 7 Dec 1990

Serial722,340Parent of this continuation · filed 27 Jun 1991

US 5,223,457 AParent of this continuation-in-part

US 5,556,501 AThis patent

From the US filing history. Foreign family members aren’t listed.