Bumped semiconductor device and method for probing the same

A semiconductor device comprising:

• a semiconductor die having integrated circuitry formed thereon;
• the semiconductor die further comprising:
• a bond pad electrically connected to a portion of the integrated circuitry;
• an insulating layer overlying the bond pad;
• an opening in the insulating layer which exposes a portion of the bond pad;
• a metal contact formed in the opening and making electrical connection to the bond pad;
• a test pad formed over the insulating layer and electrically connected to the metal contact;
• a bump pad for receiving a conductive bump formed over the insulating layer;
• and
• a metal interconnect formed over the insulating layer and electrically connecting the test pad and the bump pad.

A method for probing a semiconductor device comprising the steps of:

• providing a semiconductor substrate having integrated circuitry formed thereon within a defined semiconductor die area which is to be tested;
• forming a plurality of bond pads overlying the semiconductor substrate within the defined semiconductor die area and electrically connected to the integrated circuitry;
• depositing an insulating layer over the plurality of bond pads;
• forming a plurality of openings in the insulating layer such that an opening overlies each bond pad to expose a portion thereof;
• depositing a metal layer over the insulating layer and into the plurality of openings such that the metal layer is in electrical contact with the plurality of bond pads;
• patterning the metal layer to form a redistribution metal structure associated with each bond pad, the redistribution metal structure of each associated bond pad comprising:
• a test pad electrically connected to the associated bond pad;
• a bump pad;
• and
• a metal interconnect which electrically connects the test pad and bump pad;
• and
• probing each test pad to test functionality of the integrated circuitry.