Method of fabricating a TFT-EL pixel

A method of fabricating a TFT-EL pixel comprising the steps of:

• a) providing an insulating substrate having top and bottom surfaces, depositing a layer of silicon on the top surface of said substrate and patterning said layer to form a first and a second polycrystalline silicon island;
• b) depositing a first dielectric layer over the top surface of said substrate and over said first and second polycrystalline islands to form a gate dielectric layer;
• c) depositing a first strip of material over said first polycrystalline silicon island, and depositing a second strip of material over said second polycrystalline silicon island;
• d) depositing a layer for the bottom electrode of a capacitor;
• e) ion-implanting into said polycrystalline silicon islands and said strips of material to form source and drain regions and a doped gate electrode;
• thus forming first and second thin-film-transistors;
• f) depositing a second dielectric layer covering said first dielectric layer, said strips of material, and said bottom layer of a capacitor;
• g) etching through said first and second dielectric layers to form source and drain contact holes and depositing conducting material into said source and drain contact holes;
• h) depositing a conductive layer that forms the top electrode of said capacitor;
• i) depositing a display anode layer electrically connected to said drain of said second thin-film-transistor;
• said anode layer disposed on said second dielectric layer;
• j) depositing a third dielectric layer over the surface of the article resulting from step i;
• k) etching a hole through said third dielectric layer to expose said display anode layer;
• l) depositing an organic electroluminescent layer over said display anode layer;
• and depositing a cathode layer over said organic layer.