Insulated gate field effect transistor

An insulated-gate field effect transistor comprising:

• a non-single crystalline semiconductor layer doped with a hydrogen or halogen and having an intrinsic conductivity type;
• a channel region formed in said semiconductor layer, wherein a concentration of at least one of oxygen, carbon and nitrogen contained in at least a portion of said channel region is not higher than 5.times.10.sup.18 atoms/cm.sup.3 ;
• source and drain regions forming respective junctions with said channel region whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate;
• a gate insulator comprising silicon nitride and directly contacting said channel region;
• and
• a gate electrode contacting said gate insulator;
• wherein said channel region is interposed between the gate insulator and another insulator.

A thin film transistor comprising:

• a non-single crystalline semiconductor layer doped with a hydrogen or halogen and having an intrinsic conductivity type and having a channel region disposed in the semiconductor layer;
• source and drain regions forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate,
• a gate insulating film comprising silicon nitride and directly contacting said channel region;
• and
• a gate electrode contacting said gate insulating film;
• wherein at least a portion of said channel region contains oxygen in an amount not exceeding 5.times.10.sup.18 atoms/cm.sup.3 ;
• wherein said channel region is interposed between the gate insulating film and another insulator.

A thin film transistor comprising:

• a non-single crystalline semiconductor layer doped with a hydrogen or halogen and having an intrinsic conductivity type and having a channel region disposed in the semiconductor layer;
• source and drain regions forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate,
• a gate insulating film comprising silicon nitride and directly contacting said channel region;
• and
• a gate electrode contacting said gate insulating film;
• wherein at least a portion of said channel region contains nitrogen in an amount not exceeding 5.times.10.sup.18 atoms/cm.sup.3 ;
• wherein said channel region is interposed between the gate insulating film and another insulator.

A thin film transistor comprising:

• a non-single crystalline semiconductor layer doped with a hydrogen or halogen and having an intrinsic conductivity type and having a channel region disposed in the semiconductor layer;
• source and drain regions forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate,
• a gate insulating film comprising silicon nitride and directly contacting said channel region;
• and
• a gate electrode contacting said gate insulating film;
• wherein at least a portion of said channel region contains carbon in an amount not exceeding 5.times.10.sup.18 atoms/cm.sup.3 ;
• wherein said channel region is interposed between the gate insulating film and another insulator.

An insulated-gate field effect transistor comprising:

• a non-single crystalline semiconductor layer of an intrinsic conductivity type containing hydrogen or a halogen, said semiconductor layer being disposed over a substrate;
• a channel region formed in said semiconductor layer, wherein a concentration of at least one of oxygen, carbon and nitrogen contained in at least a portion of said semiconductor layer is not higher than 5.times.10.sup.18 atoms/cm.sup.3 ;
• source and drain regions forming respective junctions with said channel region whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate;
• a gate insulator contacting said channel region and comprising silicon and nitrogen;
• and
• a gate electrode contacting said gate insulator.

An insulated-gate field effect transistor comprising:

• a non-single crystalline semiconductor layer of an intrinsic conductivity type containing hydrogen or a halogen, said semiconductor layer being disposed over a substrate;
• a channel region formed in said semiconductor layer, wherein a concentration of at least one of oxygen, carbon and nitrogen contained in at least a portion of said channel region is not higher than 5.times.10.sup.18 atoms/cm.sup.3 ;
• source and drain regions forming respective junctions with said channel region whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate;
• a gate insulator contacting said channel region and comprising silicon and nitrogen;
• and
• a gate electrode contacting said gate insulator.

A thin film transistor comprising:

• a non-single crystalline semiconductor layer containing hydrogen or a halogen and having an intrinsic conductivity type, said semiconductor layer being disposed over a substrate including a channel region disposed in the semiconductor layer;
• source and drain region forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate,
• a gate insulating film contacting said channel region and comprising silicon and nitrogen;
• and
• a gate electrode contacting said gate insulating film;
• wherein at least a portion of said channel region contains oxygen in an amount of not exceeding 5.times.10.sup.18 atoms/cm.sup.3.

A thin film transistor comprising:

• a non-single crystalline semiconductor layer containing hydrogen or a halogen and having an intrinsic conductivity type, said semiconductor layer being disposed over a substrate including a channel region disposed in the semiconductor layer;
• source and drain region forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate,
• a gate insulating film contacting said channel region and comprising silicon and nitrogen;
• and
• a gate electrode contacting said gate insulating film;
• wherein at least a portion of said channel region contains nitrogen in an amount of not exceeding 5.times.10.sup.18 atoms/cm.sup.3.

A thin film transistor comprising:

• a non-single crystalline semiconductor layer containing hydrogen or a halogen and having an intrinsic conductivity type, said semiconductor layer being disposed over a substrate including a channel region disposed in the semiconductor layer;
• source and drain region forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate,
• a gate insulating film contacting said channel region;
• and
• a gate electrode contacting said gate insulating film and comprising silicon and nitrogen;
• wherein at least a portion of said channel region contains carbon in an amount of not exceeding 5.times.10.sup.18 atoms/cm.sup.3.