Process for preparing an amorphous ultrahard material on the basis of boron nitride
AssigneeFirma Siegfried Golz
InventorJorg Wildenburg
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AssigneeFirma Siegfried Golz
InventorJorg Wildenburg
Estimating the term…
A process for preparing amorphous ultrahard material based on boron nitride which has a hardness sufficient to scratch diamond uses hexagonal or turbostratic boron nitride hBN as starting material. The starting material is compressed at pressures of at least 70 Kbar and heated to temperatures of at least of 1650.degree. C. until a boron nitride melt is obtained, the boron nitride melt is quenched by shutting off the heat supply and the quenched boron nitride melt is then relieved of the pressure. In the process, the hexagonal or turbostratic boron nitride employed as a starting material is treated in the presence of crystallisation inhibitors so that the formation of crystals is completely prevented and an amorphous structure is compacted by incorporation of reaction products comprising boron suboxides.
A process for preparing an amorphous ultrahard material based on boron nitride and able to scratch diamond from a starting material containing crystalline hexagonal or crystalline turbostratic boron nitride, said starting material having a structure with crystal lattice layers, wherein the starting material is compressed at pressure of at least 70 Kbar and heated to temperatures of at least 1650.degree. C. until a boron nitride melt is obtained, the boron nitride melt formed is quenched by shutting off a heat supply, and the quenched boron nitride melt is then relieved of the pressure, and wherein the hexagonal or turbostratic boron nitride of the starting material is treated in the presence of a crystallisation inhibitor, said crystallisation inhibitor being an oxygen donor which is a chemical substance releasing oxygen and which is a strong oxidant that reacts with the boron nitride of the starting material at pressures of at least 70 Kbar and at temperatures of at least 1650.degree. C. and whose reaction products are incorporated into crystal lattice layers of the boron nitride;
Dependencies are inferred from the claim text.