Apparatus for manufacturing a liquid crystal display substrate, and apparatus for evaluating semiconductor crystals
AssigneeTokyo Electron Limited
InventorsIssei Imahashi, Kiichi Hama, Jiro Hata
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AssigneeTokyo Electron Limited
InventorsIssei Imahashi, Kiichi Hama, Jiro Hata
Estimating the term…
An amorphous silicon film is formed on a glass substrate by a CVD method, and then the island regions of the amorphous silicon film is changed to a plurality of polycrystalline silicon regions which are arranged in a line and apart with each other in a predetermined distanced by intermittently irradiating laser pulses each having the same dimensions as those of the island region onto the amorphous silicon film, using a laser beam irradiating section. Switching elements including the island regions as semiconductor regions are formed by etching and film-forming process to constitute a driving circuit section. The section is divided to gate driving circuit sections and source driving circuit sections for driving thin film transistors formed in a pixel region.
An apparatus for forming a thin crystalline semiconductor film comprising:
Dependencies are inferred from the claim text.