US 5,527,396 A · Deposited film forming apparatus

Abstract

A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.

Claims4

Dependent claims

A deposited film forming apparatus comprising;

raw material gas introducing means for introducing a raw material gas to a deposition chamber;
exhausting means for exhausting said deposition chamber to have a pressure of 50 m Torr or less during its film-forming;
microwave energy introducing means for inducing microwave energy on a substrate arranged in said deposition chamber so that said energy be equal to or less than the amount of energy for keeping deposition speed constant, even if said microwave energy is applied to said raw material gas and said applied energy is changed;
and
RF energy introducing means for introducing RF energy, which should be higher than said microwave energy, to said deposition chamber at the same time when said microwave energy is introduced.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

08/398,071Filed 3 Mar 1995 · division

Priority

JP 4-19604730 Jun 1992

Granted

18 Jun 1996

Term ends

Not estimatedThe source records don’t support an estimate.

Classification21 codes

H10F 10/172
Photovoltaic cells having only PIN junction potential barriers: comprising multiple PIN junctions, e.g. tandem cells
C23C 16/517
Using electric discharges: using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
G03G 5/08264
Silicon-based: comprising seven or more silicon-based layers
G03G 5/08278
Silicon-based: depositing methods

Deposited film forming apparatus

Life of this patent

Deposited film forming apparatus

Life of this patent

Abstract

Claims4