Method of making infrared detector with channel stops
AssigneeTexas Instruments Incorporated
InventorsChang-Feng Wan, Joseph D. Luttmer, Julie S. England, David E. Fleming
Life of this patent
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Abstract
Channel stops for MIS infrared photodetector devices in Hg.sub.1-x Cd.sub.x Te by lattice damage (454) between and automatically aligned to MIS gates (408). Also, field plates and guard rings are automatically aligned to MIS gates.
Claims14
A method of processing at least one semiconductor device, comprising the steps of:
- forming a gate layer on an insulated semiconductor layer;
- patterning resist on said gate layer;
- forming gates from said gate layer by removal of portions of said gate layer using said resist as a mask;
- and
- forming a channel stop by implanting ions using said resist as a mask.
A method of forming channel stops between semiconductor devices, comprising the steps of:
- providing an n-type mercury cadmium telluride semiconductor layer with two devices formed therein, each of said devices including a gate element with a sidewall insulator formed thereon;
- and
- damaging a lattice within a region of said semiconductor layer between said two devices, said damaging by implanting ions into said layer.
A method of processing semiconductor devices, said method comprising the steps of:
- forming a gate layer on an insulated semiconductor layer;
- patterning resist on said gate layer;
- forming gates from said gate layer by removal of portions of said gate layer using said resist as a mask;
- and
- depositing a conductive material on said semiconductor layer using said resist as a mask.
A method of processing at least one semiconductor device, comprising the step of:
- damaging a lattice of an n-type mercury cadmium telluride semiconductor layer in a region between gates of two devices formed in said layer, said damaging by implanting boron ions into said semiconductor layer such that said damaged region is offset from said devices.
Dependencies are inferred from the claim text.