Plasma processing system and method
AssigneeKawasaki Steel Corporation
InventorsOsamu Kinoshita, Shigemi Murakawa, Naoki Kubota
Life of this patent
Estimating the term…
Loading patent…
AssigneeKawasaki Steel Corporation
InventorsOsamu Kinoshita, Shigemi Murakawa, Naoki Kubota
Estimating the term…
An etching system contains a plasma chamber, a charge exchange chamber and a processing chamber. The charge exchange chamber and the processing chamber are partitioned with a porous plate provided with a number of fine linear microchannel holes. Positive ions generated by the plasma chamber are accelerated by an accelerating electrode in the charge exchange chamber, charge-exchanged and introduced as neutral particles through the microchannel holes into the processing chamber. Neutral particles are vertically entered into an object to be processed as neutral particle beams that are completely aligned by the microchannel holes. An object with a large surface area can be etched with high accuracy by making the porous plate a size which corresponds to the object. Thus, plasma processing with only neutral particles is carried out with high accuracy even when the surface area of the object is large.
A plasma processing system comprising:
Dependencies are inferred from the claim text.