Semiconductor laser having integrated waveguiding lens

A monolithic semiconductor structure comprising:

• a substrate having opposing reflective surfaces defining a laser cavity therebetween, said cavity having an active gain region and a passive region;
• a bottom cladding layer, a core layer and a top cladding layer all formed from semiconductor materials and disposed on said active gain region and said passive region of the substrate, the portion of the core layer in the active gain region including a semiconductor material for supplying gain to a series of optical energy modes and the portion of the core layer in the passive region forming a passive waveguide layer that does not supply gain;
• a lens integrated on said substrate at a location such that optical energy propagating in the core layer passes through said lens;
• and
• a waveguide integrated on said substrate for receiving optical energy from said lens, wherein said waveguide selectively transmits as an optical output a subset of modes from among said series of optical energy modes, said subset of modes being capable of being coupled to an external optical fiber wherein said waveguide is a multimode waveguide for transmitting a predetermined number of modes.

A semiconductor laser comprising:

• a laser cavity defined by opposing reflective surfaces formed in a semiconductor material;
• an active gain region disposed in the laser cavity;
• a lens for receiving optical energy generated by the active gain region;
• a waveguide for receiving optical energy transmitted through the lens and for transmitting optical output energy, said lens and said waveguide being monolithically integrated on a common substrate and being located within said laser cavity, wherein said waveguide has a first end located at a focal point of the lens.

A monolithic semiconductor structure comprising:

• a substrate having opposing reflective surfaces defining a laser cavity therebetween, said cavity having an active gain region and a passive region;
• a bottom cladding layer, a core layer and a top cladding layer all formed from semiconductor materials and disposed on said active gain region and said passive region of the substrate, the portion of the core layer in the active gain region including a semiconductor material for supplying gain to a series of optical energy modes and the portion of the core layer in the passive region forming a passive waveguide layer that does not supply gain;
• a lens integrated on said substrate at a location such that optical energy propagating in the core layer passes through said lens;
• and
• a waveguide integrated on said substrate for receiving optical energy from said lens, wherein said waveguide selectively transmits as an optical output a subset of modes from among said series of optical energy modes, said subset of modes being capable of being coupled to an external optical fiber, wherein said lens has a focal point located substantially coincident with one end of said waveguide for transmitting optical energy into said waveguide.

A monolithic semiconductor structure comprising:

• a substrate having opposing reflective surfaces defining a laser cavity therebetween, said cavity having an active gain region and a passive region;
• a bottom cladding layer, a core layer and a top cladding layer all formed from semiconductor materials and disposed on said active gain region and said passive region of the substrate, the portion of the core layer in the active gain region including a semiconductor material for supplying gain to a series of optical energy modes and the portion of the core layer in the passive region forming a passive waveguide layer that does not supply gain:
• a lens integrated on said substrate at a location such that optical energy propagating in the core layer passes through said lens;
• and
• a waveguide integrated on said substrate for receiving optical energy from said lens, wherein said waveguide selectively transmits as an optical output a subset of modes from among said series of optical energy modes, said subset of modes being capable of being coupled to an external optical fiber, wherein said lens and said waveguide are located on opposing sides of said active gain region.

A semiconductor laser comprising:

• a laser cavity defined by opposing reflective surfaces formed in a semiconductor material;
• an active gain region disposed in the laser cavity;
• a lens for receiving a series of optical energy modes generated by the active gain region;
• a waveguide for receiving optical energy transmitted through the lens, said lens and said waveguide being monolithically integrated on a common substrate and being located within said laser cavity, wherein said waveguide selectively transmits as an optical output a subset of modes from among said series of optical energy modes, said subset of modes being capable of being coupled to an external optical fiber, wherein said waveguide has a first end located at a focal point of the lens.

A semiconductor laser comprising:

• a laser cavity defined by opposing reflective surfaces formed in a semiconductor material;
• an active gain region disposed in the laser cavity;
• a lens for receiving a series of optical energy modes generated by the active gain region;
• a waveguide for receiving optical energy transmitted through the lens, said lens and said waveguide being monolithically integrated on a common substrate and being located within said laser cavity, wherein said waveguide selectively transmits as an optical output a subset of modes from among said series of optical energy modes, said subset of modes being capable of being coupled to an external optical fiber, wherein said active region has a tapered shape that increases in width along a propagation axis, said lens being located at a point along said propagation axis at which said width of the active gain region is a maximum, said waveguide being located on a side of said active region remote from said lens.

A semiconductor laser comprising:

• a laser cavity defined by opposing reflective surfaces formed in a semiconductor material;
• an active gain region disposed in the laser cavity;
• a lens disposed in the laser cavity for receiving optical energy generated by the active gain region;
• a waveguide disposed in the laser cavity at a location external to said active gain region such that said waveguide receives optical energy transmitted through the lens and transmits an optical output beam wherein said lens has a focal point located substantially coincident with one end of said waveguide for transmitting optical energy into said waveguide.

A semiconductor laser comprising:

• a laser cavity defined by opposing reflective surfaces formed in a semiconductor material;
• an active gain region disposed in the laser cavity;
• a lens disposed in the laser cavity for receiving optical energy generated by the active gain region;
• a waveguide disposed in the laser cavity at a location external to said active gain region such that said waveguide receives optical energy transmitted through the lens and transmits an optical output beam, wherein said lens and said waveguide are located on opposing sides of said active gain region.

A semiconductor laser comprising:

• a laser cavity defined by opposing reflective surfaces formed in a semiconductor material;
• an active gain region disposed in the laser cavity;
• a lens disposed in the laser cavity for receiving optical energy generated by the active gain region;
• a waveguide disposed in the laser cavity at a location external to said active gain region such that said waveguide receives optical energy transmitted through the lens and transmits an optical output beam, wherein said active region has a tapered shape that increases in width along a propagation axis, said lens being located at a point along said propagation axis at which said width of the active gain region is a maximum, said waveguide being located on a side of said active region remote from said lens.