Semiconductor memory device having refresh circuits
AssigneeKabushiki Kaisha Toshiba
InventorsKatsuhiko Sato, Kiyofumi Ochii, Yukihiro Urakawa
Life of this patent
Estimating the term…
Loading patent…
AssigneeKabushiki Kaisha Toshiba
InventorsKatsuhiko Sato, Kiyofumi Ochii, Yukihiro Urakawa
Estimating the term…
A semiconductor memory device including dynamic memory cells for which refresh operation is required, wherein one fundamental cycle consists of a normal operation for carrying out writing or reading into or from the memory cells and a refresh operation. This semiconductor memory device comprising: a refresh signal generating circuit supplied with a clock signal to generate a refresh signal indicating start of refresh; a count signal generating circuit supplied with the clock signal to generate a count signal required for selection of a memory cell to be refreshed, a refresh counter circuit supplied with the refresh signal and the count signal to select a word line and a bit line to which a memory cell to be refreshed is connected; and a precharge circuit supplied with the refresh signal to carry out precharge of the bit line for refresh.
A semiconductor memory device including dynamic memory cells for which refresh operation is required,
Dependencies are inferred from the claim text.