Analog switch formed of thin film transistor and having reduced leakage current
AssigneeNEC Corporation
InventorFujio Okumura
Life of this patent
Estimating the term…
Abstract
An analog switch includes first and second thin film field effect transistors having their gate connected in common to a control terminal. Current paths of the first and second thin film field effect transistors are connected in series between an input terminal and a capacitive load. A voltage adjusting capacitive element is connected to a common connection between the current paths of the first and second thin film field effect transistors.
Claims5
An analog switch comprising at least first and second thin film field effect transistors each having a gate electrode directly connected in common to a control terminal, source-drain paths of said at least first and second thin film field effect transistors being directly connected in series to each other between an input terminal and a capacitive load, and a voltage adjusting capacitive element directly connected to a common connection between said source-drain current paths of said at least first and second thin film field effect transistors.
An analog switch comprising:
- at least first and second thin film field effect transistors each having a gate electrode connected in common to a control terminal, source-drain current paths of said at least first and second thin film field effect transistors being connected in series to each other between an input terminal and a capacitive load;
- and a voltage adjusting capacitive element connected to a common connection between said source-drain current paths of said at least first and second thin film field effect transistors;
- wherein each of said at least first and second thin film field effect transistors has a common semiconductor thin film formed on an insulating substrate, wherein said gate electrode of each of said at least first and second thin film field effect transistors is formed on a gate insulator film on said semiconductor thin film, and wherein each of said capacitive load and said capacitive element has one electrode which is formed on said insulating substrate so as to interpose and interlayer insulating film and a conductive film between the one electrode and said insulating substrate.
Dependencies are inferred from the claim text.