Method and arrangement for charge carrier profiling in semiconductor structure by means of AFM scanning
AssigneeSentech Instruments GmbH
InventorUwe Henninger
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Abstract
In the atomic force microscopy method, the scanning system modified to provide high-frequency control is set into oscillation by electrical pulses having an amplitude that is adjustable and variable within a wide range. The pulses are so short that contact between the scanning tip and the sample is avoided. The pulse amplitude and/or form are varied in order to generate space charge zones in the semiconductor structures that are shaped differently within wide limits.
Claims9
A method for charge carrier profiling in semiconductor structures by means of an electrically conductive AFM scanning system having a scanning tip on a support cantilever, the method comprising the steps of:
- spacing the tip while stationary a predetermined distance from the surface of a semiconductor structure under examination;
- setting the scanning system into oscillation with high frequency electrical pulses generated by a pulse generator connected to the cantilever and the structure under examination, the pulses having a duration that is sufficiently short to avoid contact with the surface of the structure under examination;
- and
- varying a characteristic of the pulses to generate in the structure under examination space charge zones that are differently shaped.
Dependencies are inferred from the claim text.