Additive structure and method for testing semiconductor wire bond dies

A structure for facilitating testing and burn-in of a semiconductor wire bond die having a wire bond pad and a region of active circuitry associated therewith, said semiconductor wire bond die also including an upper surface insulator having an aperture therein exposing said wire bond pad, said structure comprising:

• a conductive strap comprised of a conductive metal compatible with wire bonding, said conductive strap electrically and physically contacting said wire bond pad to substantially cover an upper surface of said wire bond pad, said conductive strap having an upper surface above said wire bond pad to facilitate subsequent wire bond electrical connection to said wire bond pad through said conductive strap, said conductive strap extending in a lateral direction from said wire bond pad above said upper surface insulator and above said region of active circuitry of said semiconductor wire bond die;
• and
• a solderable conductive test protrusion disposed on said conductive strap, said solderable conductive test protrusion being laterally displaced from said wire bond pad and disposed above said region of active circuitry of said semiconductor wire bond die, said solderable conductive test protrusion being configured to facilitate connection of an external test device thereto such that electrical testing of said semiconductor wire bond die can occur through said structure without direct physical contact of said external test device to said wire bond pad.

A semiconductor wire bond die comprising:

• a semiconductor substrate having a region of active circuitry associated therewith;
• a plurality of wire bond pads disposed above said semiconductor substrate and electrically connected to said region of active circuitry;
• a plurality of exposed electrical conductors comprised of a conductive metal compatible with wire bonding and disposed above said semiconductor substrate, each exposed electrical conductor being electrically and physically connected to an upper surface of a respective wire bond pad of said plurality of wire bond pads and configured to extend above said region of active circuitry in a lateral direction from said respective wire bond pad, said plurality of exposed electrical conductors being disposed such that each exposed electrical conductor is spaced from all other exposed electrical conductors of said plurality of exposed electrical conductors;
• and
• a plurality of solderable test contacts, each test contact being configured to facilitate electrical contact of an external connector thereto, each test contact being electrically connected to a respective exposed electrical conductor of said plurality of exposed electrical conductors and disposed above said region of active circuitry of said semiconductor substrate, each solderable test contact being laterally displaced from said respective wire bond pad such that electrical testing of said semiconductor wire bond die can occur through each solderable test contact without direct physical contact of said external connector to said respective wire bond pad, whereby subsequent wire bond electrical connection to said respective wire bond pad is facilitated.

A method for testing a semiconductor wire bond die, said semiconductor wire bond die having a region of active circuitry associated therewith, said semiconductor wire bond die also including a wire bond pad disposed at an upper surface thereof, said method comprising:

• (a) forming an electrical conductor comprised of a conductive metal compatible with wire bonding, said electrical conductor having a solderable test contact disposed above said upper surface of said semiconductor wire bond die and above said region of active circuitry, said solderable test contact being laterally displaced from said wire bond pad and configured to facilitate electrical contact of an external connector thereto, said electrical conductor including an electrical interconnect portion extending laterally from said wire bond pad over said region of active circuitry and above the upper surface of said semiconductor wire bond die, said electrical interconnect portion electrically connecting said solderable test contact and said wire bond pad;
• (b) electrically connecting an external test connector to said solderable test contact;
• and
• (c) electrically testing said semiconductor wire bond die using said external test connector without direct physical contact of said external test connector to said wire bond pad., whereby subsequent wire bond electrical connection to said respective wire bond pad is facilitated.