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US 5,517,054 AGranted
N-InP Schottky diode structure and a method of making the same
AssigneeNational Science Council
InventorsWen C. Huang, Tan F. Lei, Chung L. Lee
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Abstract
A new Schottky diode structure, Pt/Al/n-InP, is disclosed in the present invention. The thickness of Al layer of the Schottky diode structure is restricted in a range of about 80-120 .ANG.. This structure gives a barrier height of 0.74 eV and an ideality factor of 1.11 after it was annealed at 300.degree. C. for 10 min. This is due to the formation of Aluminum-oxide, as the interfacial layer to improve barrier height. A method of preparing this Schottky diode structure is also disclosed in the present invention.
Claims2
An n-InP Schottky diode intermediate product comprising:
- a n-InP substrate having a native InPO.sub.4 on its surfaces;
- an aluminum layer having a thickness of from about 80 .ANG. to about 120 .ANG. being formed on an upper surface of said n-InP substrate;
- and
- a platinum layer formed on said aluminum layer.
1 more element
Dependencies are inferred from the claim text.