Polysilicon thin film with a particulate product of SiO.sub.x
AssigneeKanegafuchi Chemical Industry Co., Ltd.
InventorKenji Yamamoto
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Abstract
The polysilicon thin film of the present invention is formed on a glass substrate or the like having a particulate product of SiO.sub.x (0<x.ltoreq.2) of size not more than 100 .ANG., for example, dispersed into not more than 100 pieces in an area of 0.1 .mu.m square. Furthermore, in the production method of a polysilicon thin film of the present invention, a particulate product of SiO.sub.x (0<x.ltoreq.2) of size not more than 100 .ANG., for example, dispersed into not more than 100 pieces in an area of 0.1 .mu.m square, is formed on a substrate, and thereafter a polysilicon thin film is grown using this particulate product as a nucleus.
Claims8
An article comprising a substrate, an amorphous silicon film formed on said substrate, and a polysilicon thin film formed on said amorphous silicon film, said amorphous silicon film having a thickness of not more than 100 .ANG., said amorphous silicon film comprising particulate products of SiO.sub.x (0<x.ltoreq.2) of grain size not more than 100 .ANG..
Dependencies are inferred from the claim text.