Solid state imager with opaque layer
AssigneeGeneral Electric Company
InventorsChing-Yeu Wei, Robert F. Kwasnick, Siegfried Aftergut, Brian W. Giambattista
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Abstract
A solid state radiation imager includes a photosensor array having a plurality of pixels disposed on a substrate, each pixel having a respective photosensor coupled to a thin film transistor (TFT). The photosensor array further includes an opaque passivation layer that is disposed over non-photodiode areas of the photosensor array, including the TFT and address lines in the array. The opaque passivation layer has an absorbance that is greater than 1, and typically that is greater than 2. The opaque passivation layer further is typically made of a thermally stable polymer mixed with a light absorbing material such as an organic dye (e.g., Sudan Black B), carbon black, or graphite.
Claims14
A solid state radiation imager comprising:
- a photosensor array disposed on a substrate, said photosensor array comprising a plurality of photosensors and thin film transistors (TFTs), each of said photosensors comprising a respective photosensitive island disposed over said substrate and electrically coupled to a respective one of said TFTs, respective ones of said photosensors and TFTs coupled together comprising respective pixels in said array, said array further comprising an optically transmissive common electrode disposed, said TFTs and said photosensor islands being disposed between said common electrode and said substrate;
- said photosensor array further comprising an opaque passivation layer disposed around said photosensor islands so as to cover non-photosensor island areas in each of said pixels and to overlie at least said TFTs, said common electrode being disposed over said opaque passivation layer;
- said opaque passivation layer comprising a thermally stable polymer mixed with a light absorbing material.
Dependencies are inferred from the claim text.