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US 5,516,707 AGranted
Large-tilted-angle nitrogen implant into dielectric regions overlaying source/drain regions of a transistor
AssigneeVLSI Technology, Inc.
InventorsYing-Tsong Loh, Lily Ding, Edward D. Nowak
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Abstract
A transistor is formed which has improved hot carrier immunity. On a substrate, between two source/drain regions, a gate region is formed over a dielectric region. An implant is used to dope the source/drain regions. After doping the source/drain regions, a tilted angle nitrogen implant is performed to implant nitrogen into areas of the dielectric region overlaying the drain/source regions of the transistor. The tilted angle nitrogen implant may be performed before or after forming spacer regions on sides of the gate region.
Claims3
A method for producing a transistor, the method comprising the steps of:
- (a) forming on a substrate between two source/drain regions, a gate region on top of a dielectric region, the dielectric region including areas which overlay the drain/source regions;
- (b) performing an implant to dope the source/drain regions;
- (c) performing a tilted angle nitrogen implant to implant nitrogen into the areas of the dielectric region overlaying the drain/source regions of the transistor:
- and,
- (d) forming spacer regions on sides of the gate region after the tilted angle nitrogen implant performed in step (c).
2 more elements
Dependencies are inferred from the claim text.