Light-receiving member and methods of producing light-receiving member
AssigneeCanon Kabushiki Kaisha
InventorsSatoshi Kojima, Hirokazu Ohtoshi, Hitoshi Murayama
Life of this patent
Estimating the term…
Loading patent…
AssigneeCanon Kabushiki Kaisha
InventorsSatoshi Kojima, Hirokazu Ohtoshi, Hitoshi Murayama
Estimating the term…
In order to improve characteristics of a light-receiving member for electrophotography having a photoconductive layer comprising an amorphous silicon material and implement a method for facilitating designing of a layer structure, the present invention provides a light-receiving member which is formed by depositing in sequence a photoconductive layer which comprises a non-monocrystalline material comprising silicon atoms as a main element and a surface layer on a conductive substrate, wherein the photoconductive layer comprises at least hydrogenated amorphous silicon which contains at least carbon atoms and boron atoms and the boron atom content in the photoconductive layer in a direction of film thickness is varied in a correlation of exponential functions with respect to the carbon atom content in the photoconductive layer in the direction of film thickness, and a method for producing the light-receiving member by forming a layer while controlling a charge of a starting gas for the boron atoms in the correlation of exponential functions with respect to a charge of a starting gas for the carbon atoms.
A light-receiving member comprising a photoconductive layer having a non-monocrystalline material comprising silicon atoms as a main element and a surface layer formed in this order on a substrate having at least a conductive surface, wherein said photoconductive layer comprises hydrogenated amorphous silicon containing at least carbon atoms and boron atoms and a correlation between a carbon atom content (X) and a boron atom content (Y) in a direction of film thickness in said photoconductive layer has a relationship of exponential functions.
A method for producing a light-receiving member comprising a photoconductive layer which comprises hydrogenated amorphous silicon containing carbon atoms and boron atoms by a CVD method, wherein said layer is formed by controlling a charge of a starting gas for said boron atoms with respect to a charge of a starting gas for said carbon atoms so that they have a correlation of exponential functions as given in equation (2):
Dependencies are inferred from the claim text.