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US 5,516,589 AGranted
Silicon carbide thin film circuit element and method of manufacturing the same
AssigneeRohm Co., Ltd.
InventorKeita Nii
Life of this patent
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Abstract
A silicon carbide thin film circuit element, in which a layer of .beta.-SiC is allowed to grow laterally also on the surface of a P-type Si monocrystal substrate by vapor growth deposition, to form a circuit element is formed on an insulating material layer having a high melting point.
Claims2
A silicon carbide thin film circuit element comprising:
- a silicon substrate;
- a layer of insulating material having a high melting point in the form of a grid on the silicon substrate;
- a layer of .beta.-SiC (beta-silicon carbide) formed laterally from a silicon substrate region not covered by the grid on the upper surface of the layer of insulating material and free from the crystalline characteristic of the underlying silicon substrate;
- an electrode structure formed on the layer of .beta.-SiC;
- and at least two impurity regions in which an impurity has been implanted in the .beta.-SiC layer located on opposite sides of the electrode structure.
2 more elements
Dependencies are inferred from the claim text.