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AssigneeApplied Materials, Inc.
InventorsLawrence C. Lei, Ilya Perlov, Karl A. Littau, Alan F. Morrison, Mei Chang, Ashok K. Sinha
Estimating the term…
Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
A chemical vapor deposition chamber comprising a source of precursor gas, a susceptor having a surface for receiving a substrate thereon and a vacuum exhaust system, comprising:
A chemical vapor deposition chamber comprising a source of precursor gas, a susceptor having a surface for receiving a substrate thereon and a vacuum exhaust system, comprising:
A chemical vapor deposition chamber including a gas supply, a susceptor and an exhaust system, comprising:
A chemical vapor deposition chamber comprising a source of process gas, a heated susceptor and a vacuum exhaust system, comprising:
A chemical vapor deposition chamber comprising a source of process gas, a susceptor having a substrate receiving surface thereon and an exhaust system, comprising:
Dependencies are inferred from the claim text.