Specially doped precursor solutions for use in methods of producing doped ABO.sub.3 -type average perovskite thin-film capacitors
AssigneesSymetrix Corporation, Matsushita Electronics Corporation
InventorsMasamichi Azuma, Bradley M. Melnick, Michael C. Scott, Carlos A. Paz de Araujo
Life of this patent
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Abstract
Metal doping agents are introduced into metal polyoxyalkylated liquid precursor solutions for use in processes for forming thin-layer capacitors (10) to be used in integrated circuits such as DRAMS and the like. The dopants serve to reduce capacitor leakage current by altering a dominant type of electron emission, as determined by a change in the slope of a line plotted as leakage current versus bias voltage. The specially doped precursor solutions preferably include mixtures of Ce, Cr, Dy, Mn, and Ti moieties.
Claims24
A method of preparing a precursor liquid for use in fabricating ABO.sub.3 perovskite dielectric thin film integrated circuit components, comprising the steps of:
- furnishing an A-site portion including a first liquid polyoxyalkylated metal complex having at least one A-site metal moiety bonded to first organic ligands selected from a first group consisting of alkoxides, carboxylates, and alkoxycarboxylates;
- combining said A-site portion with a B-site portion including a second liquid polyoxyalkylated metal complex having at least one B-site metal moiety bonded to second organic ligands selected from a second group consisting of alkoxides and alkoxycarboxylates when said first organic ligands are carboxylates, alkoxycarboxylates and carboxylates when said first organic ligands are alkoxides, and alkoxides and carboxylates, when said first organic ligands are alkoxycarboxylates, said A-site portion and said B-site portion forming a mixture;
- heating said mixture to eliminate water and react said A-site portion with said B-Site portion with yield of a bimetallic portion including molecules having both an A-Site metal and a B-site metal;
- providing a dopant portion including a third liquid polyoxyalkylated metal complex having at least one dopant moiety selected from a group consisting of A-site metals and B-site metals;
- and
- mixing said A-site portion, said B-site portion, and said dopant portion to substantial homogeneity throughout said liquid to make said liquid ready for application to an integrated circuit substrate, said liquid being essentially water-free in a made-ready state.
Dependencies are inferred from the claim text.