Frequency doubler and short wave laser source using the same and optical data processing apparatus using the short wave laser source
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKazubisa Yamamoto, Kiminori Mizuuchi
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Abstract
A frequency doubler comprising periodic domain-inverted regions, in which a nonlinear degradation layer is formed on the surface of a waveguide, whereby the TM.sub.00 mode of the fundamental wave is converted into the TM.sub.10 mode of the high harmonic wave so as to reduce the effects of optical damage in order to stably output the TM.sub.10 mode of the high harmonic wave.
Claims12
A short wave laser source comprising a semiconductor laser and a frequency doubler, said frequency doubler including a nonlinear crystal substrate having formed therein (a) periodic domain inverted regions having a first nonlinear coefficient, (b) a nonlinear degradation layer having a second nonlinear coefficient which is much smaller than the first nonlinear coefficient, and (c) a waveguide, said nonlinear crystal substrate having an outer surface and having a third nonlinear coefficient which is substantially equal to said first nonlinear coefficient, said nonlinear degradation layer being formed in said waveguide on a side near to the outer surface of said crystal substrate, wherein when a fundamental wave from said semiconductor laser is introduced into said waveguide, a TM.sub.00 mode of said fundamental wave excited in said waveguide is converted into a TM.sub.10 mode of a high harmonic wave which is then emitted from an emitting part of said waveguide.
A optical data processing apparatus comprising a short wave laser source with a semiconductor laser and a frequency doubler, and a data recording or reproducing medium, said frequency doubler including a nonlinear crystal substrate having formed therein (a) periodic domain inverted regions having a first nonlinear coefficient, (b) a nonlinear degradation layer having a second nonlinear coefficient which is much smaller than the first nonlinear coefficient, and (c) a waveguide, said nonlinear crystal substrate having an outer surface and having a third nonlinear coefficient which is substantially equal to said first nonlinear coefficient, said nonlinear degradation layer being formed in said waveguide on a side near to the outer surface of said crystal substrate, wherein when a fundamental wave from said semiconductor laser is introduced into said waveguide, a TM.sub.10 mode of a high harmonic wave which is produced in said waveguide is emitted from an end face of the waveguide, and a beam of the high harmonic wave is irradiated onto the said recording or reproducing medium.
Dependencies are inferred from the claim text.