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US 5,515,314 AGranted
Storage device
AssigneeFujitsu Limited
InventorsTohru Kouhei, Hideyuki Kikuchi
Life of this patent
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Abstract
A storage device includes an MR element; write circuit responsive to input of binary storage data indicative of either a first state or a second state, and applying a write magnetic field in a first direction correspondingly to the first state, or applying the write magnetic field in a reverse second direction correspondingly to the second state; and read circuit for applying a bias magnetic field to the MR element and discriminating between the first and second states in accordance with the volume resistivity of the MR element.
Claims16
A storage device comprising:
- a magnetoresistive element presenting hysteresis characteristic in the relationship between a magnetic field and a volume resistivity change rate;
- write means for applying, in response to input binary storage data indicative of change either a first state or a second state, a write magnetic field of a predetermined intensity in a first direction to said magnetoresistive element correspondingly to said first state, or applying said write magnetic field in a second direction, which is reverse to said first direction, to said magnetoresistive element correspondingly to said second state;
- and
- read means for applying to said magnetoresistive element a bias magnetic field which is lower in intensity than said write magnetic field, and discriminating between said first and second states on the basis of the volume resistivity change rate of said magnetoresistive element.
1 more element
Dependencies are inferred from the claim text.