Semiconductor device having multi-level interconnection structure
AssigneeNEC Corporation
InventorKuniaki Koyama
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises a silicon via-plug within a fine via-hole in direct contact with an inner wall of the via-hole. A metal silicide layer is formed between an interconnection layer and the silicon plug as well as between the silicon plug and a diffused layer formed in a substrate. Shape defects and excessive stresses formed within a fine via-hole are reduced because the via-hole is filled with the silicon plug substantially without a metallic film or a metal silicide film on a sidewall. The metal silicide film is formed by a heat treatment through silicidation reaction.
Claims9
A semiconductor device comprising:
- a silicon substrate;
- a diffused region formed in said silicon substrate;
- an insulating film formed on said substrate and having a via-hole above said diffused region;
- an interconnection layer formed on said insulating film;
- a silicon plug formed within said via-hole in direct contact with an inner wall of said via-hole;
- and
- a first conductive portion made of a first metal silicide and formed between said diffused region and said silicon plug, said interconnection layer having a second conductive portion made of a second metal silicide which is in direct contact with said silicon plug, said second conductive portion being formed from a reaction between a metal and silicon and being made of a same material as said first metal silicide.
A semiconductor device comprising:
- a substrate;
- a first interconnection layer formed overlying said substrate;
- an interlayer insulating film formed on said interconnection layer and having a via-hole exposing a portion of said first interconnection layer;
- a second interconnection layer formed on said interlayer insulating film and having a first portion disposed above said interlayer insulating film and a second portion disposed within said via-hole;
- and
- a silicon plug formed within said via-hole in direct contact with an inner wall of said via-hole,
- each of said first portion and said second portion being made of a metal silicide and in direct contact with said silicon plug, said second portion being disposed between said silicon plug and said first interconnection layer.
Dependencies are inferred from the claim text.