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AssigneeSumitomo Electric Industries, Ltd.
InventorsTetsuya Inoue, Makoto Otsuki, Tetsuichi Yokota
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The disclosed compound semiconductor single-crystalline substrate for liquid phase epitaxial growth has a relatively low cost and excellent practicality. This compound semiconductor single-crystalline substrate has a surface roughness of at least 1 .mu.m and not more than 10 .mu.m as measured over a line of 1 mm length. This substrate is employed as a substrate for an epitaxial wafer for an infrared- or visible light-emitting diode. Due to its particular roughness, the substrate can be prevented from slipping or falling while it is transported during processing. Furthermore, no lapping and polishing are required for manufacturing the substrate. Thus, the substrate for liquid phase epitaxial growth can be provided at a relatively low cost.
A semiconductor element comprising a compound semiconductor single-crystalline substrate for liquid phase epitaxial growth thereon, wherein said substrate has rough surface means for reducing slipping of said substrate from a holding tool, said means have an average surface roughness within a range from 1 .mu.m to 20 .mu.m inclusive, said average surface roughness is an average of a plurality of roughness values measured respectively at a plurality of measurement areas each having an area of about 1 cm.sup.2 on said surface, each roughness value is a difference between a maximum surface height and a minimum surface height along a 1 mm long line within a respective one of said measurement areas, and at least 50% of said roughness values are within a range from 1 .mu.m to 20 .mu.m inclusive.
A semiconductor element comprising a compound semiconductor single-crystalline substrate for liquid phase epitaxial growth thereon, wherein said substrate has rough surface means for reducing slipping of said substrate from a holding tool, and said means have an average surface roughness within a range from 1 .mu.m to 20 .mu.m inclusive, further comprising an epitaxial layer grown on said rough surface means of said substrate by liquid phase epitaxy, wherein said rough surface means forms a rough internal feature between said single-crystalline substrate and said epitaxial layer, and said epitaxial layer is at least about 10 .mu.m thick and has a thickness that varies less than about .+-.5%.
A semiconductor element comprising a compound semiconductor single-crystalline substrate for liquid phase epitaxial growth thereon, wherein said substrate has rough surface means for reducing slipping of said substrate from a holding tool, and said means have an average surface roughness within a range from 1 .mu.m to 20 .mu.m inclusive, further comprising an epitaxial layer grown on said rough surface means of said substrate by liquid phase epitaxy, wherein said rough surface means forms a rough internal feature between said single-crystalline substrate and said epitaxial layer, said single-crystalline substrate comprises an intrinsic GaAs wafer, and said epitaxial layer comprises a doped GaAs layer.
A semiconductor element comprising a compound semiconductor single-crystalline substrate for liquid phase epitaxial growth thereon, wherein said substrate has rough surface means for reducing slipping of said substrate from a holding tool, and said means have an average surface roughness within a range from 1 .mu.m to 20 .mu.m inclusive, further comprising an epitaxial layer grown on said rough surface means of said substrate by liquid phase epitaxy, wherein said rough surface means forms a rough internal feature between said single-crystalline substrate and said epitaxial layer, said single-crystalline substrate comprises a Zn-doped GaAs wafer, and said epitaxial layer comprises an AlGaAs layer.
A semiconductor element comprising a compound semiconductor single-crystalline substrate for liquid phase epitaxial growth thereon, wherein said substrate has at least one rough surface having an average surface roughness within a range from 1 .mu.m to 20 .mu.m inclusive, further comprising an epitaxial layer grown on said rough surface of said substrate by liquid phase epitaxy, wherein said rough surface forms a rough internal feature between said single-crystalline substrate and said epitaxial layer, said single-crystalline substrate comprises a Zn-doped GaAs wafer, and said epitaxial layer comprises an AlGaAs layer.
Dependencies are inferred from the claim text.