Multi-terminal resonant tunneling transistor
AssigneeTRW Inc.
InventorsNeal J. Schneier, John J. Berenz
Life of this patent
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Abstract
A transistor according to the invention for simultaneously providing at least two current-voltage characteristics includes a base, a collector, and an emitter. At least one of the base, collector, and emitter includes a first layer grown using molecular beam epitaxy (MBE). The first layer includes a first strip having a first doping characteristic created using focused ion beam processing. A second strip has a second doping characteristic created by focused ion beam processing. A middle section of undoped material is located between the first and second strips. A resonant tunneling junction is grown on the first layer using MBE and includes a plurality of layers.
Claims25
A transistor for simultaneously providing at least two current-voltage characteristics and having a collector and an emitter, wherein at least one of said emitter, base and collector comprises:
- a first layer including first and second outer strips joined by a middle strip, said first outer strip having a first doping characteristic, said second outer strip having a second doping characteristic distinct from said first doping characteristic;
- and
- a resonant tunneling junction including at least one barrier layer and at least one quantum well layer adjacent said first layer.
A transistor for simultaneously providing at least two current-voltage characteristics, comprising:
- a collector layer;
- a base layer adjacent said collector layer and having first and second outer strips connected by a middle strip, said first outer strip having a first doping characteristic, and said second outer strip having a second doping characteristic distinct from said first doping characteristic;
- and
- a resonant tunneling junction on said base layer including at least one quantum well layer and at least one barrier layer, said resonant tunneling junction having the same number barrier layers adjacent said first outer strip as said second outer strip during operation.
A transistor for simultaneously providing at least two current-voltage characteristics, comprising:
- a collector layer;
- a resonant tunneling junction adjacent said collector layer and including at least one quantum well layer and at least one barrier layer;
- a base layer adjacent said resonant tunneling junction layer and having first and second outer strips connected by a middle strip, said first outer strip having a first doping characteristic, and said second outer strip having a second doping characteristic distinct from said first doping characteristic, wherein said resonant tunneling junction has the same number barrier layers adjacent said first outer strip as said second outer strip during operation.
A transistor for simultaneously providing at least two current-voltage characteristics, comprising:
- a collector layer having first and second outer strips connected by a middle strip, said first outer strip having a first doping characteristic, and said second outer strip having a second doping characteristic distinct from said first doping characteristic;
- and
- a resonant tunneling junction adjacent said collector layer and including at least one quantum well layer and at least one barrier layer, wherein said resonant tunneling junction has the same number barrier layers adjacent said first outer strip as said second outer strip during operation.
A transistor for simultaneously providing at least two current-voltage characteristics, comprising:
- an emitter layer having first and second outer strips connected by a middle strip, said first outer strip having a first doping characteristic, and said second outer strip having a second doping characteristic distinct from said first doping characteristic;
- and
- a resonant tunneling junction adjacent said emitter layer and including at least one quantum well layer and at least one barrier layer, wherein said resonant tunneling junction has the same number barrier layers adjacent said first outer strip as said second outer strip during operation.
Dependencies are inferred from the claim text.