Method of producing PN junction device
AssigneeSeiko Instruments Inc.
InventorsKenji Aoki, Tadao Akamine, Naoto Saito
Life of this patent
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Abstract
A PN junction device is formed by removing an inert film from a surface of an N type semiconductor layer to expose an active face, then applying a source gas containing an P type impurity component to the active face to form an impurity adsorption film, and thereafter carrying out a solid-phase diffusion of the impurity is carried out from a diffusion source composed of the P type impurity adsorption film into the N type semiconductor layer to form therein a P type semiconductor layer to thereby provide a PN junction. Lastly, a pair of electrodes are connected to the respective semiconductor layers to form the an PN junction device.
Claims8
A method of producing a PN junction device, comprising:
- providing a semiconductor layer of a first conductivity type having a surface and provided with an inert film on the surface;
- removing the inert film from the surface of the semiconductor layer of the first conductivity type, by a heat treatment at a background pressure of less than 1.times.10.sup.-4 Pa at the surface of the semiconductor layer to expose an active surface of the semiconductor layer;
- applying to the active surface a gas containing an impurity component of a second conductivity type opposite to the first conductivity type and heating the semiconductor layer to a temperature between 400.degree. C. and 950.degree. C. to chemically form an impurity adsorption film constituting a diffusion source on the active surface, wherein the semiconductor layer is maintained continuously in a vacuum after said step of removing and during said step of applying;
- carrying out solid-phase diffusion of the impurity component from the diffusion source into the semiconductor layer of the first conductivity type to form another semiconductor layer of the second conductivity type to thereby form a PN junction between the semiconductor layer of the first conductivity type and the other semiconductor layer of the second conductivity type;
- and
- connecting a respective electrode to each semiconductor layer.
A method of producing a PN junction device, comprising:
- providing a semiconductor layer of a first conductivity type having an uneven surface and provided with an inert film on the surface;
- removing the inert film from the uneven surface of the semiconductor layer of the first conductivity type, by a heat treatment to expose an active surface of the semiconductor layer;
- applying to the active surface a gas containing an impurity component of a second conductivity type opposite to the first conductivity type and heating the semiconductor layer to a temperature between 400.degree. C. and 950.degree. C. to chemically form an impurity adsorption film constituting a diffusion source on the active surface, wherein said steps of removing and applying are performed sequentially in a vacuum chamber without removing the semiconductor layer from the chamber;
- carrying out solid-phase diffusion of the impurity component from the diffusion source into the uneven surface of the semiconductor layer of the first conductivity type to form another semiconductor layer of the second conductivity type to thereby form a PN junction between the semiconductor layer of the first conductivity type and the other semiconductor layer of the second conductivity type;
- and
- connecting a respective electrode to each semiconductor layer.
Dependencies are inferred from the claim text.