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US 5,514,619 AGranted
Method of producing a laser device
AssigneesMatsushita Electric Industrial Co., Ltd., Optoelectronics Technology Research Laboratory
InventorsShinichi Wakabayashi, Hitomaro Tougou, Yukio Toyoda
Life of this patent
Estimating the term…
Abstract
A semiconductor microstructure is formed by forming a groove having a surface of a side wall and a surface of a bottom, and depositing a semiconductor layer in the groove so that a width of the semiconductor layer is defined by the surface of the side wall.
Claims9
A method for producing a laser device including a first set of quantum-well layers disposed in an active layer that is disposed between waveguides, said method comprising the steps of:
- (a) forming, in an active layer, a first groove, and
- (b) depositing a first set of quantum-well-layers in the first groove, said first groove being defined by parallel side walls extending substantially parallel to a deposition direction of the first get of quantum-well layers and said quantum-well layers of the first set of quantum-well layers having widths substantially equal to each other as determined by said parallel side walls.
Dependencies are inferred from the claim text.