Oriented ferroelectric thin film
AssigneeFuji Xerox Co., Ltd.
InventorKeiichi Nashimoto
Life of this patent
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Abstract
An orientative ferroelectric thin film has such a structure that an epitaxial or orientative buffer layer having a double layer structure constituted by two layers is formed on a semiconductor single crystal (100) substrate, and an epitaxial or orientative perovskite ABO.sub.3 type ferroelectric thin film is further formed on the buffer layer. The epitaxial or orientative buffer layer has a structure in which a perovskite ABO.sub.3 type thin film is formed on an MgO thin film. Also, an orientative ferroelectric thin film has such a structure that an opitaxial MgO buffer layer is formed on a single crystal Si (100) substrate, and an epitaxial or orientative perovskite ABO.sub.3 type ferroelectric thin film is formed on the buffer layer.
Claims9
An oriented ferroelectric thin film, comprising:
- a semiconductor single crystal (100) substrate;
- an epitaxial or oriented buffer layer formed on said semiconductor single crystal (100) substrate wherein said epitaxial or oriented buffer layer has a structure in which a buffer thin film having a perovskite ABO.sub.3 structure is formed on an MgO thin film;
- and
- an epitaxial or oriented ferroelectric thin film having a perovskite ABO.sub.3 structure formed on said buffer thin film of said buffer layer, wherein said ferroelectric thin film is a different material than said buffer thin film.
An oriented ferroelectric thin film, comprising:
- a single crystal Si (100) substrate;
- an epitaxial MgO (100) buffer layer formed on said single crystal Si (100) substrate;
- and
- an epitaxial or oriented ferroelectric thin film having a perovskite ABO.sub.3 (001) structure formed on said buffer layer.
An oriented ferroelectric thin film, comprising:
- a single crystal Si (100) substrate;
- an epitaxial MgO buffer layer formed on said single crystal Si (100) substrate;
- and
- an epitaxial or oriented ferroelectric thin film having a perovskite ABO.sub.3 structure formed on said buffer layer wherein a crystallographic relationship between said epitaxial MgO buffer layer and said epitaxial or oriented ferroelectric thin film having a perovskite ABO.sub.3 structure is expressed by ABO.sub.3 (001)//MgO (100) or ABO.sub.3 (100)//MgO (100), and ABO.sub.3 (010)//MgO (001), or ABO.sub.3 (001)//MgO (001) in intra-surface orientation.
Dependencies are inferred from the claim text.