Magnetoresistance effect element
AssigneesUbe Industries, Ltd., Kanegafuchi Chemical Industry Co., Ltd., Nippon Steel Corporation, TDK Corporation, Tosoh Corporation, Toyo Boseki Kabushiki Kaisha, Japan Energy Corporation, NEC Corporation, Matsushita Electric Industrial Co., Ltd., Seisan Kaihatsu Kagaku Kenkyusho
InventorsTeruya Shinjo, Hidefumi Yamamoto, Toshihiko Anno, Toshio Takada
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Abstract
A magnetoresistance effect element having a substrate, a buffer layer of a metal selected from the group consisting of chromium, tungsten, titanium, vanadium, manganese and their alloys which is formed on the substrate, and at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on the metal thin layer, wherein adjacent magnetic thin layers through the non-magnetic thin layer have different coercive forces. This magnetoresistance effect element has an increased magnetoresistance ratio.
Claims9
A magnetoresistance effect element comprising a substrate, a buffer layer of a metal selected from the group consisting of chromium, tungsten, titanium, vanadium, manganese and their alloys which is formed on said substrate, and repeated unit multilayers, each unit having at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on said metal thin layer, wherein adjacent magnetic thin layers having the non-magnetic thin layer interposed therebetween have different coercive forces, and the number of said unit multilayers is from 3 to 50.
Dependencies are inferred from the claim text.